Dr. Neophytos Lophitis

Neophytos gained the BA in Electrical and Information Science (2008), the MEng in Electrical and Electronic Engineering (2009) and the PhD in Power Semiconductor Devices (2014) from the University of Cambridge, Cambridge, UK. 

Currently he is a Lecturer in Electrical Engineering at the School of Computing, Electronics and Mathematics, Coventry University, member of the Centre for Mobility and Transport, Coventry University, and Academic Collaborator with the High Voltage Microelectronics and Sensors Group, University of Cambridge.

  • N. Lophitis, M. Antoniou, U. Vemulapati, M. Arnold, I. Nistor, J. Vobecky, M. Rahimo, and F. Udrea, “New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop,” IEEE Electron Device Letters, vol. 37, no. 4, pp. 467–470, Apr. 2016.
  • M. Antoniou, N. Lophitis, F. Bauer, I. Nistor, M. Bellini, M. Rahimo, G. Amaratunga, and F. Udrea, “Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors,” IEEE Electron Device Letters, vol. 36, no. 8, pp. 823–825, Aug. 2015.
  • N. Lophitis, M. Antoniou, F. Udrea, U. Vemulapati, M. Arnold, I. Nistor, J. Vobecky, and M. Rahimo, “Improving Current Controllability in Bi-Mode Gate Commutated Thyristors,” IEEE Transactions on Electron Devices, vol. 62, no. 7, pp. 2263–2269, Jul. 2015.
  • J. Vobecky, N. Lophitis, M. Arnold, T. Wikström, I. Nistor, M. Antoniou, and F. Udrea, “Parameters influencing the maximum controllable current in gate commutated thyristors,” IET Circuits, Devices & Systems, vol. 8, no. 3, pp. 221–226, May 2014.
  • N. Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. T. Rahimo, M. Arnold, T. Wikstroem, and J. Vobecky, “Gate Commutated Thyristor With Voltage Independent Maximum Controllable Current,” IEEE Electron Device Letters, vol. 34, no. 8, pp. 954–956, Aug. 2013.
  • N. Lophitis, M. Antoniou, F. Udrea, F. D. Bauer, I. Nistor, M. Arnold, T. Wikstrom, and J. Vobecky, “The Destruction Mechanism in GCTs,” IEEE Transactions on Electron Devices, vol. 60, no. 2, pp. 819–826, Feb. 2013.
  • N. Lophitis, M. Antoniou, F. Udrea, U. Vemulapati, M. Arnold, M. Rahimo, and J. Vobecky, “4.5kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode,” in IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, pp. 371–374.
  • U. Vemulapati, M. Arnold, M. Rahimo, J. Vobecky, T. Stiasny, N. Lophitis, and F. Udrea, “An Experimental Demonstration of a 4.5 kV Bi-mode Gate Commutated Thyristor (BGCT),” in IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2015, pp. 109 – 112.
  • M. Antoniou, N. Lophitis, F. Udrea, F. Bauer, I. Nistor, M. Bellini, and M. Rahimo, “Experimental demonstration of the p-ring Trench IGBT concept: A new design for minimizing the conduction losses,” in IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2015, vol. 2015-June, pp. 21–24.
  • N. Lophitis, M. Antoniou, F. Udrea, M. Rahimo, I. Nistor, M. Arnold, T. Wikstrom, J. Vobecky, and M. Rahimo, “The Stripe Fortified GCT : A new GCT design for maximizing the controllable current,” in IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2014, pp. 123–126.
  • N. Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikström, and J. Vobecky, “Optimization of Parameters influencing the Maximum Controllable Current in Gate Commutated Thyristors,” in IET International Seminar on Power Semiconductors (ISPS), 2012.
  • N. Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikstrom, J. Vobecky, and T. Wikström, “Experimentally validated three dimensional GCT wafer level simulations,” in IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2012.
  • N. Lophitis, M. Antoniou, F. Udrea, T. Wikstroem, and I. Nistor, “Turn-off failure mechanism in large area IGCTs,” in IEEE International Semiconductor Conference (CAS), 2011, vol. 2, pp. 361–364.
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Coventry University No.1 Modern University No.1 Modern University in the Midlands
Coventry University awarded TEF GOLD Teaching Excellence Framework
University of the year shortlisted
QS Five Star Rating 2020
Coventry City of Culture 2021